Directed self-assembly of silicon-containing block copolymer thin films

Michael J. Maher; Charles T. Rettner; Christopher M. Bates; Gregory Blachut; Matthew C. Carlson; William J. Durand; Christopher J. Ellison; Daniel P. Sanders; Joy Y. Cheng; C. Grant Willson

doi:10.1021/am508197k

Directed self-assembly of silicon-containing block copolymer thin films

Michael J. Maher
, Charles T. Rettner
, Christopher M. Bates
, Gregory Blachut
, Matthew C. Carlson
, William J. Durand
, Christopher J. Ellison
, Daniel P. Sanders
, Joy Y. Cheng
, C. Grant Willson

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L₀ = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

Original language	English (US)
Pages (from-to)	3323-3328
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	5
DOIs	https://doi.org/10.1021/am508197k
State	Published - Feb 11 2015

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

Keywords

block copolymers
chemo-epitaxy
directed self-assembly
grapho-epitaxy
lithography
top coats

Publisher link

10.1021/am508197k

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@article{02d36f324f034f4baf0c550598926460,

title = "Directed self-assembly of silicon-containing block copolymer thin films",

abstract = "The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0 = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.",

keywords = "block copolymers, chemo-epitaxy, directed self-assembly, grapho-epitaxy, lithography, top coats",

author = "Maher, \{Michael J.\} and Rettner, \{Charles T.\} and Bates, \{Christopher M.\} and Gregory Blachut and Carlson, \{Matthew C.\} and Durand, \{William J.\} and Ellison, \{Christopher J.\} and Sanders, \{Daniel P.\} and Cheng, \{Joy Y.\} and Willson, \{C. Grant\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = feb,

day = "11",

doi = "10.1021/am508197k",

language = "English (US)",

volume = "7",

pages = "3323--3328",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Directed self-assembly of silicon-containing block copolymer thin films

AU - Maher, Michael J.

AU - Rettner, Charles T.

AU - Bates, Christopher M.

AU - Blachut, Gregory

AU - Carlson, Matthew C.

AU - Durand, William J.

AU - Ellison, Christopher J.

AU - Sanders, Daniel P.

AU - Cheng, Joy Y.

AU - Willson, C. Grant

PY - 2015/2/11

Y1 - 2015/2/11

N2 - The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0 = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

AB - The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0 = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

KW - block copolymers

KW - chemo-epitaxy

KW - directed self-assembly

KW - grapho-epitaxy

KW - lithography

KW - top coats

UR - https://www.scopus.com/pages/publications/84922797691

UR - https://www.scopus.com/pages/publications/84922797691#tab=citedBy

U2 - 10.1021/am508197k

DO - 10.1021/am508197k

M3 - Article

C2 - 25594107

AN - SCOPUS:84922797691

SN - 1944-8244

VL - 7

SP - 3323

EP - 3328

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 5

ER -

Directed self-assembly of silicon-containing block copolymer thin films

Abstract

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