Directed self-assembly of silicon-containing block copolymer thin films

Michael J. Maher; Charles T. Rettner; Christopher M. Bates; Gregory Blachut; Matthew C. Carlson; William J. Durand; Christopher J. Ellison; Daniel P. Sanders; Joy Y. Cheng; C. Grant Willson

doi:10.1021/am508197k

Directed self-assembly of silicon-containing block copolymer thin films

Michael J. Maher, Charles T. Rettner, Christopher M. Bates, Gregory Blachut, Matthew C. Carlson, William J. Durand, Christopher J. Ellison, Daniel P. Sanders, Joy Y. Cheng, C. Grant Willson

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L₀ = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

Original language	English (US)
Pages (from-to)	3323-3328
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	5
DOIs	https://doi.org/10.1021/am508197k
State	Published - Feb 11 2015

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

Keywords

block copolymers
chemo-epitaxy
directed self-assembly
grapho-epitaxy
lithography
top coats

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10.1021/am508197k

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title = "Directed self-assembly of silicon-containing block copolymer thin films",

abstract = "The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0 = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.",

keywords = "block copolymers, chemo-epitaxy, directed self-assembly, grapho-epitaxy, lithography, top coats",

author = "Maher, {Michael J.} and Rettner, {Charles T.} and Bates, {Christopher M.} and Gregory Blachut and Carlson, {Matthew C.} and Durand, {William J.} and Ellison, {Christopher J.} and Sanders, {Daniel P.} and Cheng, {Joy Y.} and Willson, {C. Grant}",

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T1 - Directed self-assembly of silicon-containing block copolymer thin films

AU - Maher, Michael J.

AU - Rettner, Charles T.

AU - Bates, Christopher M.

AU - Blachut, Gregory

AU - Carlson, Matthew C.

AU - Durand, William J.

AU - Ellison, Christopher J.

AU - Sanders, Daniel P.

AU - Cheng, Joy Y.

AU - Willson, C. Grant

PY - 2015/2/11

Y1 - 2015/2/11

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AB - The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0 = 22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

KW - block copolymers

KW - chemo-epitaxy

KW - directed self-assembly

KW - grapho-epitaxy

KW - lithography

KW - top coats

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Directed self-assembly of silicon-containing block copolymer thin films

Abstract

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