Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures

Mitra Dutta, Hongen Shen, J. Pamulapati, Wayne H. Chang, Michael A. Stroscio, Xiaoqiang Zhang, D. M. Kim, K. W. Chung, P. P. Ruden, Marshall I. Nathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In0.15Ga0.85As obtained in this measurement is 2.2 ± 0.5 × 105 V/cm, which agrees very well with theory.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages203-210
Number of pages8
ISBN (Print)0819408395, 9780819408396
DOIs
StatePublished - 1992
EventSpectroscopic Characterization Techniques for Semiconductor Technology IV - Somerset, NJ, USA
Duration: Mar 22 1992Mar 22 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1678
ISSN (Print)0277-786X

Other

OtherSpectroscopic Characterization Techniques for Semiconductor Technology IV
CitySomerset, NJ, USA
Period3/22/923/22/92

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