TY - JOUR
T1 - Direct measurement of ion beam induced, nanoscale roughening of GaN
AU - Cui, Bentao
AU - Cohen, P. I.
AU - Dabiran, A. M.
PY - 2005
Y1 - 2005
N2 - The formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient v was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.
AB - The formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient v was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.
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U2 - 10.1557/proc-864-e4.37
DO - 10.1557/proc-864-e4.37
M3 - Conference article
AN - SCOPUS:30544434177
VL - 864
SP - 201
EP - 206
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
M1 - E4.37
T2 - 2005 materials Research Society Spring Meeting
Y2 - 28 March 2005 through 1 April 2005
ER -