Direct measurement of ion beam induced, nanoscale roughening of GaN

Bentao Cui, P. I. Cohen, A. M. Dabiran

Research output: Contribution to journalConference articlepeer-review

Abstract

The formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient v was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

Original languageEnglish (US)
Article numberE4.37
Pages (from-to)201-206
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume864
DOIs
StatePublished - 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Fingerprint

Dive into the research topics of 'Direct measurement of ion beam induced, nanoscale roughening of GaN'. Together they form a unique fingerprint.

Cite this