Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

Andrew Lyle; Jonathan Harms; Shruti Patil; Xiaofeng Yao; David J. Lilja; Jian Ping Wang

doi:10.1063/1.3499427

Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

Andrew Lyle, Jonathan Harms, Shruti Patil, Xiaofeng Yao, David J. Lilja, Jian Ping Wang

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

We experimentally demonstrated a magnetic tunnel junction (MTJ) based circuit that allows direct communication between elements without intermediate sensing amplifiers. The input of the circuit consists of three MTJs connected in parallel. The direct communication is realized by connecting the output in series with the input and applying voltage across the series connections. Combining the circuit with complementary metal oxide semiconductor current mirrors allows for fan-out to multiple outputs. The change in resistance at the input resulted in a voltage swing across the output of 150-200 mV for the closest input states which is sufficient to realize all of the Boolean primitives.

Original language	English (US)
Article number	152504
Journal	Applied Physics Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1063/1.3499427
State	Published - Oct 11 2010

Bibliographical note

Funding Information:
This work was supported partially by the MRSEC Program of the National Science Foundation under Award Nos. DMR-0212302 and DMR-0819885, and ECCS 0702264 and 0609023.

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abstract = "We experimentally demonstrated a magnetic tunnel junction (MTJ) based circuit that allows direct communication between elements without intermediate sensing amplifiers. The input of the circuit consists of three MTJs connected in parallel. The direct communication is realized by connecting the output in series with the input and applying voltage across the series connections. Combining the circuit with complementary metal oxide semiconductor current mirrors allows for fan-out to multiple outputs. The change in resistance at the input resulted in a voltage swing across the output of 150-200 mV for the closest input states which is sufficient to realize all of the Boolean primitives.",

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AU - Harms, Jonathan

AU - Patil, Shruti

AU - Yao, Xiaofeng

AU - Lilja, David J.

AU - Wang, Jian Ping

N1 - Funding Information: This work was supported partially by the MRSEC Program of the National Science Foundation under Award Nos. DMR-0212302 and DMR-0819885, and ECCS 0702264 and 0609023.

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Y1 - 2010/10/11

N2 - We experimentally demonstrated a magnetic tunnel junction (MTJ) based circuit that allows direct communication between elements without intermediate sensing amplifiers. The input of the circuit consists of three MTJs connected in parallel. The direct communication is realized by connecting the output in series with the input and applying voltage across the series connections. Combining the circuit with complementary metal oxide semiconductor current mirrors allows for fan-out to multiple outputs. The change in resistance at the input resulted in a voltage swing across the output of 150-200 mV for the closest input states which is sufficient to realize all of the Boolean primitives.

AB - We experimentally demonstrated a magnetic tunnel junction (MTJ) based circuit that allows direct communication between elements without intermediate sensing amplifiers. The input of the circuit consists of three MTJs connected in parallel. The direct communication is realized by connecting the output in series with the input and applying voltage across the series connections. Combining the circuit with complementary metal oxide semiconductor current mirrors allows for fan-out to multiple outputs. The change in resistance at the input resulted in a voltage swing across the output of 150-200 mV for the closest input states which is sufficient to realize all of the Boolean primitives.

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Direct communication between magnetic tunnel junctions for nonvolatile logic fan-out architecture

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