Abstract
The effect of dimensional quantization on the density of states in amorphous semiconductors is studied theoretically. The disorder is treated as a random potential with zero correlation length (eewhite noiseee). The transition of the density of states from staircase to smooth behavior with increasing disorder is traced for high-energy electrons and it was found to occur at substantially smaller film thicknesses than in experimental data. The possibility of resolving this contradiction in other models of disorder is discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7701-7704 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 41 |
| Issue number | 11 |
| DOIs | |
| State | Published - Jan 1 1990 |
| Externally published | Yes |
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