Dimensional quantization in a-Si:H quantum-well structures: The alloy model

M. E. Raikh, S. D. Baranovskii, B. I. Shklovskii

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The effect of dimensional quantization on the density of states in amorphous semiconductors is studied theoretically. The disorder is treated as a random potential with zero correlation length (eewhite noiseee). The transition of the density of states from staircase to smooth behavior with increasing disorder is traced for high-energy electrons and it was found to occur at substantially smaller film thicknesses than in experimental data. The possibility of resolving this contradiction in other models of disorder is discussed.

Original languageEnglish (US)
Pages (from-to)7701-7704
Number of pages4
JournalPhysical Review B
Volume41
Issue number11
DOIs
StatePublished - Jan 1 1990
Externally publishedYes

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