Diffusion of the silicon dimer on Si(001): New possibilities at 450 K

Brian Borovsky, Michael Krueger, Eric Ganz

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Abstract

We report on the discovery of a novel diffusion pathway for silicon dimers on the Si(001) surface. As a small molecule, the dimer’s configuration can play a central role in its diffusion. Using scanning tunneling microscopy movies at temperatures near 450 K, we show, in real time, changes in the dimer’s configuration during its diffusion. These changes in configuration provide a pathway for diffusion across the substrate dimer rows, unlike the well-known diffusion along the dimer rows. The important energies involved in dimer row crossing are measured.

Original languageEnglish (US)
Pages (from-to)4229-4232
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number22
DOIs
StatePublished - Jan 1 1997

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