The scanning tunneling microscopy atom-tracking technique is used to follow the individual diffusive hops of single H and D atoms on the Si(001) surface in ultrahigh vacuum. Attempt frequencies and activation energies for diffusion along the dimer row (intrarow) and between the atoms of a single Si dimer (intradimer) are extracted. For intrarow H diffusion, an activation energy of 1.75±0.10 eV and an attempt frequency of (Formula presented) are found. For intradimer H diffusion, an activation energy of 1.01±0.05 eV and a low attempt frequency of (Formula presented) are found. The ratios of H to D attempt frequencies for intradimer and intrarow diffusion are also determined.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1999|