Diffusion of adsorbed Si dimers on Si(001)

Michael Krueger, Brian Borovsky, Eric D Ganz

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The diffusion of adsorbed Si dimers on the Si(001)-2 × 1 surface is studied with hot scanning tunneling microscopy and a tracking technique in which each diffusive event is resolved. The activation energy for diffusion of a dimer along the top of a substrate dimer row is found to be 1.09 ± 0.05 eV, with an attempt frequency of 1013.2±0.6 Hz. A lower bound of 1.40 eV is placed on the activation energy for dimer dissociation. The free energy of a dimer is observed to decrease by 32 ± 2 meV at a site adjacent to a type-A step.

Original languageEnglish (US)
Pages (from-to)146-154
Number of pages9
JournalSurface Science
Issue number1
StatePublished - Aug 1 1997


  • Epitaxy growth
  • Models of surface kinetics
  • Molecular dynamics
  • Scanning tunneling microscopy
  • Silicon
  • Stepped single crystal surfaces
  • Surface diffusion

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