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Dielectric properties of wurtzite and zincblende structure gallium nitride

  • R. Wang
  • , P. P. Ruden
  • , J. Kolnik
  • , I. Oguzman
  • , K. F. Brennan

Research output: Contribution to journalArticlepeer-review

Abstract

We present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The q-dependent static dielectric functions, ∈(q), are found to be similar for the two crystal modifications. The optical dielectric functions, ∈(ω), however, are different in the range 6eV < (latin small letter h with stroke)ω < 12eV. We also evaluate the indices of refraction in the frequency range near the fundamental bandgaps and the absorption coefficients above the bandgaps for both modifications of GaN. The results are in good agreement with experimental data. The birefringence of wurtzite GaN is briefly discussed.

Original languageEnglish (US)
Pages (from-to)913-918
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume58
Issue number6
DOIs
StatePublished - Jun 1997

Bibliographical note

Funding Information:
RW thanks Drs James Chelikowsky and Barry Schaudt for helpful discussions. We acknowledge the Minnesota Supercomputer Institute (MSI) for technical support. This work is supported in part by NSF under contract numbers ECS-9408479 (University of Minnesota) and ECS-9313635 (Georgia Institute of Technology).

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This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 3 - Good Health and Well-being
    SDG 3 Good Health and Well-being

Keywords

  • A. electronic materials
  • A. semiconductors
  • D. dielectric properties
  • D. electronic structure

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