Abstract
We present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The q→-dependent static dielectric functions, ∈∞(q→), are found to be similar for the two crystal modifications. The optical dielectric functions, ∈∞(ω), however, are different in the range 6eV < (latin small letter h with stroke)ω < 12eV. We also evaluate the indices of refraction in the frequency range near the fundamental bandgaps and the absorption coefficients above the bandgaps for both modifications of GaN. The results are in good agreement with experimental data. The birefringence of wurtzite GaN is briefly discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 913-918 |
| Number of pages | 6 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 58 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1997 |
Bibliographical note
Funding Information:RW thanks Drs James Chelikowsky and Barry Schaudt for helpful discussions. We acknowledge the Minnesota Supercomputer Institute (MSI) for technical support. This work is supported in part by NSF under contract numbers ECS-9408479 (University of Minnesota) and ECS-9313635 (Georgia Institute of Technology).
Keywords
- A. electronic materials
- A. semiconductors
- D. dielectric properties
- D. electronic structure
