Dielectric properties of oxidized porous silicon in a low resistivity substrate

Rebecca L. Peterson; Rhonda R Franklin

doi:10.1109/MWSYM.2001.967005

Dielectric properties of oxidized porous silicon in a low resistivity substrate

Rebecca L. Peterson, Rhonda R Franklin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.

Original language	English (US)
Pages (from-to)	767-770
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.2001.967005
State	Published - Jan 1 2001

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abstract = "Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.",

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AB - Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.

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Dielectric properties of oxidized porous silicon in a low resistivity substrate

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