Dielectric properties of oxidized porous silicon in a low resistivity substrate

Rebecca L. Peterson, Rhonda R Franklin

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Oxidized porous silicon (OPS) is characterized for its high frequency electrical properties up to 50 GHz. Transmission line properties are determined from measurement data and are compared with high and low resistivity silicon benchmark designs. Best OPS performance of 50 Ohm lines is observed on oxide-capped OPS, having attenuation of approximately 2.93 dB/cm at 4 GHz with an effective dielectric constant of 3.25. This technology offers promise for extending the use of CMOS circuitry to higher RF frequencies.

Original languageEnglish (US)
Pages (from-to)767-770
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
StatePublished - Jan 1 2001

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