Abstract
We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.
Original language | English (US) |
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Pages (from-to) | 665-672 |
Number of pages | 8 |
Journal | Philosophical Magazine Letters |
Volume | 89 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2009 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was financially supported by the Ministry of Knowledge Economy, Republic of Korea, through the Component-Material development program, Army Research Office USA (47576MS) and by the Office of Basic Energy Science, Department of Energy, USA (DE-FG02-08ER46 484).
Keywords
- Dipolar defect
- Glassy behavior
- Hardening
- Piezoelectric
- Thin film