Diamond growth chemistry during atmospheric-pressure plasma CVD

Steven L Girshick, J. W. Lindsay

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Diamond films were deposited by chemical vapor deposition using a radio-frequency induction plasma operating at 130 torr. Linear growth rates of polycrystalline diamond films ranged from 18 to 37 μm h-1. For a fixed substrate temperature of 1000°C the input methane-hydrogen ratio was varied from 2% to 10%. Over this range the resulting film morpologies changed from faceted ball-like structures to well-faceted diamond, then to non-faceted balls, and for the well-faceted films increases in methane-hydrogen ratio caused the film texture to shift toward the 〈100〉 direction. During these experiments gas sampled through an orifice in the center of the substrate was delivered to a gas chromatograph for measurement of stable hydrocarbon species. As the input methane-hydrogen ratio was increased the measured methane-acetylene ratio decreased. The gas chromatograph measurements showed marked differences from measurements made for an RF reactor with somewhat different flow geometry operating at atmospheric pressure.

Original languageEnglish (US)
Pages (from-to)3-11
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume416
StatePublished - Jan 1 1996

Fingerprint Dive into the research topics of 'Diamond growth chemistry during atmospheric-pressure plasma CVD'. Together they form a unique fingerprint.

Cite this