Device model for light-emitting field-effect transistors with organic semiconductor channel

P. Paul Ruden, Darryl L. Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a device model for light-emitting, ambipolar, organic field-effect transistors based on the gradual channel approximation. The model results are in very good agreement with recent experimental data. Trapping of injected carriers in localized states in the channel region is shown to be an important mechanism that can strongly affect the transfer characteristics and the light emission of these devices.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications
PublisherMaterials Research Society
Pages92-97
Number of pages6
ISBN (Print)9781605604367
DOIs
StatePublished - Jan 1 2007
EventOrganic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1003
ISSN (Print)0272-9172

Other

OtherOrganic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

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