Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

D. E. Grider; A. I. Akinwande; R. Mactaggart; P. P. Ruden; J. C. Nohava; T. E. Nohava; J. E. Breezley; P. Joslyn; D. Tetzlaff

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

D. E. Grider
, A. I. Akinwande
, R. Mactaggart
, P. P. Ruden
, J. C. Nohava
, T. E. Nohava
, J. E. Breezley
, P. Joslyn
, D. Tetzlaff

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	143-146
Number of pages	4
State	Published - Oct 1 1990
Event	12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA Duration: Oct 7 1990 → Oct 10 1990

Other

Other	12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
City	New Orleans, LA, USA
Period	10/7/90 → 10/10/90

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Grider, D. E., Akinwande, A. I., Mactaggart, R., Ruden, P. P., Nohava, J. C., Nohava, T. E., Breezley, J. E., Joslyn, P., & Tetzlaff, D. (1990). Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 143-146). Publ by IEEE.

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. / Grider, D. E.; Akinwande, A. I.; Mactaggart, R. et al.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1990. p. 143-146.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grider, DE, Akinwande, AI, Mactaggart, R, Ruden, PP, Nohava, JC, Nohava, TE, Breezley, JE, Joslyn, P & Tetzlaff, D 1990, Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, pp. 143-146, 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC, New Orleans, LA, USA, 10/7/90.

@inproceedings{eae2493d19fe4f9fa00a582113e06c98,

title = "Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology",

abstract = "A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26\% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.",

author = "Grider, \{D. E.\} and Akinwande, \{A. I.\} and R. Mactaggart and Ruden, \{P. P.\} and Nohava, \{J. C.\} and Nohava, \{T. E.\} and Breezley, \{J. E.\} and P. Joslyn and D. Tetzlaff",

year = "1990",

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booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

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T1 - Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

AU - Grider, D. E.

AU - Akinwande, A. I.

AU - Mactaggart, R.

AU - Ruden, P. P.

AU - Nohava, J. C.

AU - Nohava, T. E.

AU - Breezley, J. E.

AU - Joslyn, P.

AU - Tetzlaff, D.

PY - 1990/10/1

Y1 - 1990/10/1

N2 - A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

AB - A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

UR - https://www.scopus.com/pages/publications/0025495933

UR - https://www.scopus.com/pages/publications/0025495933#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0025495933

SP - 143

EP - 146

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC

Y2 - 7 October 1990 through 10 October 1990

ER -

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

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