Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

D. E. Grider; A. I. Akinwande; R. Mactaggart; P. P. Ruden; J. C. Nohava; T. E. Nohava; J. E. Breezley; P. Joslyn; D. Tetzlaff

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

D. E. Grider, A. I. Akinwande, R. Mactaggart, P. P. Ruden, J. C. Nohava, T. E. Nohava, J. E. Breezley, P. Joslyn, D. Tetzlaff

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	143-146
Number of pages	4
State	Published - Oct 1 1990
Event	12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA Duration: Oct 7 1990 → Oct 10 1990

Other

Other	12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
City	New Orleans, LA, USA
Period	10/7/90 → 10/10/90

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Grider, D. E., Akinwande, A. I., Mactaggart, R., Ruden, P. P., Nohava, J. C., Nohava, T. E., Breezley, J. E., Joslyn, P., & Tetzlaff, D. (1990). Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 143-146). Publ by IEEE.

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. / Grider, D. E.; Akinwande, A. I.; Mactaggart, R. et al.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1990. p. 143-146.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grider, DE, Akinwande, AI, Mactaggart, R, Ruden, PP, Nohava, JC, Nohava, TE, Breezley, JE, Joslyn, P & Tetzlaff, D 1990, Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, pp. 143-146, 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC, New Orleans, LA, USA, 10/7/90.

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title = "Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology",

abstract = "A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.",

author = "Grider, {D. E.} and Akinwande, {A. I.} and R. Mactaggart and Ruden, {P. P.} and Nohava, {J. C.} and Nohava, {T. E.} and Breezley, {J. E.} and P. Joslyn and D. Tetzlaff",

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AU - Grider, D. E.

AU - Akinwande, A. I.

AU - Mactaggart, R.

AU - Ruden, P. P.

AU - Nohava, J. C.

AU - Nohava, T. E.

AU - Breezley, J. E.

AU - Joslyn, P.

AU - Tetzlaff, D.

PY - 1990/10/1

Y1 - 1990/10/1

N2 - A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

AB - A complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1-μm gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 μW/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1-kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1K SRAMs at a power of 650 mW. The 1K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.

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BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

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T2 - 12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC

Y2 - 7 October 1990 through 10 October 1990

ER -

Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

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