Abstract
A 50 ohm micromachined interconnect is designed, fabricated, and measured as a broadband interconnect that is compatible with the standard thickness of wafers. It is developed in two applications: a transition from a commercially available 1 mm connector launch assembly to wafer based systems and an interconnect within wafer level designs. S-parameter measured data is shown for coaxially launched structures up to 35 GHz and for probed launched structures up to 50 GHz. The on-wafer probe launched interconnect exhibits less than 1. 1 dB/cm of attenuation at 50 GHz, reflections less than 15 dB across 50 GHz, and 2.5 times less dispersion than a planar microstrip with comparable dimensions.
Original language | English (US) |
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Pages (from-to) | 551-556 |
Number of pages | 6 |
Journal | Proceedings - Electronic Components and Technology Conference |
Volume | 1 |
State | Published - 2005 |
Event | 55th Electronic Components and Technology Conference, ECTC - Lake Buena Vista, FL, United States Duration: May 31 2005 → Jun 4 2005 |