Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

Sean L. Rommel; Niu Jin; T. E. Dillon; Sandro J. Di Giacomo; Joel Banyai; Bryan Cord; C. D'Imperio; D. J. Hancock; N. Kirpalani; V. Emanuele; Paul R. Berger; Phillip E. Thompson; Karl D. Hobart; Roger Lake

Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

Sean L. Rommel
, Niu Jin
, T. E. Dillon
, Sandro J. Di Giacomo
, Joel Banyai
, Bryan Cord
, C. D'Imperio
, D. J. Hancock
, N. Kirpalani
, V. Emanuele
, Paul R. Berger
, Phillip E. Thompson
, Karl D. Hobart
, Roger Lake

Minnesota Nano Center

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The recent developments in Si based tunnel diode technologies have made it possible to realize circuits incorporating both tunnel diodes and transistors. This article presents and demonstrate a variety of Si-based tunnel diode structures configured to meet the needs of a CMOS environment.

Original language	English (US)
Pages	159-160
Number of pages	2
State	Published - 2000
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

Other

Other	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

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Rommel, S. L., Jin, N., Dillon, T. E., Di Giacomo, S. J., Banyai, J., Cord, B., D'Imperio, C., Hancock, D. J., Kirpalani, N., Emanuele, V., Berger, P. R., Thompson, P. E., Hobart, K. D., & Lake, R. (2000). Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications. 159-160. Paper presented at 58th Device Research Conference (58th DRC), Denver, CO, USA.

Rommel, SL, Jin, N, Dillon, TE, Di Giacomo, SJ, Banyai, J, Cord, B, D'Imperio, C, Hancock, DJ, Kirpalani, N, Emanuele, V, Berger, PR, Thompson, PE, Hobart, KD & Lake, R 2000, 'Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications', Paper presented at 58th Device Research Conference (58th DRC), Denver, CO, USA, 6/19/00 - 6/21/00 pp. 159-160.

@conference{28d8b5bedc874f0aa41cbac77cfb863d,

title = "Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications",

abstract = "The recent developments in Si based tunnel diode technologies have made it possible to realize circuits incorporating both tunnel diodes and transistors. This article presents and demonstrate a variety of Si-based tunnel diode structures configured to meet the needs of a CMOS environment.",

author = "Rommel, \{Sean L.\} and Niu Jin and Dillon, \{T. E.\} and \{Di Giacomo\}, \{Sandro J.\} and Joel Banyai and Bryan Cord and C. D'Imperio and Hancock, \{D. J.\} and N. Kirpalani and V. Emanuele and Berger, \{Paul R.\} and Thompson, \{Phillip E.\} and Hobart, \{Karl D.\} and Roger Lake",

year = "2000",

language = "English (US)",

pages = "159--160",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

}

TY - CONF

T1 - Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

AU - Rommel, Sean L.

AU - Jin, Niu

AU - Dillon, T. E.

AU - Di Giacomo, Sandro J.

AU - Banyai, Joel

AU - Cord, Bryan

AU - D'Imperio, C.

AU - Hancock, D. J.

AU - Kirpalani, N.

AU - Emanuele, V.

AU - Berger, Paul R.

AU - Thompson, Phillip E.

AU - Hobart, Karl D.

AU - Lake, Roger

PY - 2000

Y1 - 2000

N2 - The recent developments in Si based tunnel diode technologies have made it possible to realize circuits incorporating both tunnel diodes and transistors. This article presents and demonstrate a variety of Si-based tunnel diode structures configured to meet the needs of a CMOS environment.

AB - The recent developments in Si based tunnel diode technologies have made it possible to realize circuits incorporating both tunnel diodes and transistors. This article presents and demonstrate a variety of Si-based tunnel diode structures configured to meet the needs of a CMOS environment.

UR - https://www.scopus.com/pages/publications/0033645697

UR - https://www.scopus.com/pages/publications/0033645697#tab=citedBy

M3 - Paper

AN - SCOPUS:0033645697

SP - 159

EP - 160

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

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