Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

Sean L. Rommel, Niu Jin, T. E. Dillon, Sandro J. Di Giacomo, Joel Banyai, Bryan Cord, C. D'Imperio, D. J. Hancock, N. Kirpalani, V. Emanuele, Paul R. Berger, Phillip E. Thompson, Karl D. Hobart, Roger Lake

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The recent developments in Si based tunnel diode technologies have made it possible to realize circuits incorporating both tunnel diodes and transistors. This article presents and demonstrate a variety of Si-based tunnel diode structures configured to meet the needs of a CMOS environment.

Original languageEnglish (US)
Pages159-160
Number of pages2
StatePublished - Jan 1 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Other

Other58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

Fingerprint Dive into the research topics of 'Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications'. Together they form a unique fingerprint.

Cite this