Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells

M. W. Derstine, J. A. Lehman, P. P. Ruden

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present a study of the dependence of the magnitude of optical nonlinearities of GaAs/AlGaAs multiple quantum wells on quantum well thickness. Using four-wave mixing and nonlinear absorption measurements the refractive nonlinearity was determined in 17 samples grown by MOCVD and MBE. We find a small variation (less tban a factor of three) in the change in refractive index per photoexcited carrier for well sizes between 50 A and 300 A. or bulk GaAs.

Original languageEnglish (US)
Pages (from-to)131-137
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume881
DOIs
StatePublished - May 3 1988

Fingerprint

Quantum Well
Gallium Arsenide
Semiconductor quantum wells
nonlinearity
MOCVD
quantum wells
Nonlinearity
Nonlinear Absorption
Four-wave Mixing
Four wave mixing
Metallorganic chemical vapor deposition
Molecular beam epitaxy
four-wave mixing
Refractive Index
metalorganic chemical vapor deposition
aluminum gallium arsenides
Refractive index
refractivity
gallium arsenide

Cite this

Determination Of The Third Order Nonlinearity As A Function Of Quantum Well Width In Gaas/A1Gaas Multiple Quantum Wells. / Derstine, M. W.; Lehman, J. A.; Ruden, P. P.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 881, 03.05.1988, p. 131-137.

Research output: Contribution to journalArticle

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