We present a study of the dependence of the magnitude of optical nonlinearities of GaAs/AlGaAs multiple quantum wells on quantum well thickness. Using four-wave mixing and nonlinear absorption measurements the refractive nonlinearity was determined in 17 samples grown by MOCVD and MBE. We find a small variation (less tban a factor of three) in the change in refractive index per photoexcited carrier for well sizes between 50 A and 300 A. or bulk GaAs.
|Original language||English (US)|
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - May 3 1988|