Determination of layer-dependent exciton binding energies in few-layer black phosphorus

Guowei Zhang, Andrey Chaves, Shenyang Huang, Fanjie Wang, Qiaoxia Xing, Tony Low, Hugen Yan

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems.Monoand few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. We report the first systematic measurement of exciton binding energies in ultrahigh-quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2 to 6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer numbers can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.

Original languageEnglish (US)
Article numbereaap9977
JournalScience Advances
Volume4
Issue number3
DOIs
StatePublished - Mar 16 2018

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Phosphorus
Semiconductors
Physics
Spectrum Analysis
LDS 751
Electrons
Equipment and Supplies

PubMed: MeSH publication types

  • Journal Article
  • Research Support, Non-U.S. Gov't

Cite this

Determination of layer-dependent exciton binding energies in few-layer black phosphorus. / Zhang, Guowei; Chaves, Andrey; Huang, Shenyang; Wang, Fanjie; Xing, Qiaoxia; Low, Tony; Yan, Hugen.

In: Science Advances, Vol. 4, No. 3, eaap9977, 16.03.2018.

Research output: Contribution to journalArticle

Zhang, Guowei ; Chaves, Andrey ; Huang, Shenyang ; Wang, Fanjie ; Xing, Qiaoxia ; Low, Tony ; Yan, Hugen. / Determination of layer-dependent exciton binding energies in few-layer black phosphorus. In: Science Advances. 2018 ; Vol. 4, No. 3.
@article{1951b44bc2934bc0a8e826b56707c0fc,
title = "Determination of layer-dependent exciton binding energies in few-layer black phosphorus",
abstract = "The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems.Monoand few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. We report the first systematic measurement of exciton binding energies in ultrahigh-quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2 to 6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer numbers can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.",
author = "Guowei Zhang and Andrey Chaves and Shenyang Huang and Fanjie Wang and Qiaoxia Xing and Tony Low and Hugen Yan",
year = "2018",
month = "3",
day = "16",
doi = "10.1126/sciadv.aap9977",
language = "English (US)",
volume = "4",
journal = "Science advances",
issn = "2375-2548",
publisher = "American Association for the Advancement of Science",
number = "3",

}

TY - JOUR

T1 - Determination of layer-dependent exciton binding energies in few-layer black phosphorus

AU - Zhang, Guowei

AU - Chaves, Andrey

AU - Huang, Shenyang

AU - Wang, Fanjie

AU - Xing, Qiaoxia

AU - Low, Tony

AU - Yan, Hugen

PY - 2018/3/16

Y1 - 2018/3/16

N2 - The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems.Monoand few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. We report the first systematic measurement of exciton binding energies in ultrahigh-quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2 to 6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer numbers can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.

AB - The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems.Monoand few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. We report the first systematic measurement of exciton binding energies in ultrahigh-quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2 to 6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer numbers can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.

UR - http://www.scopus.com/inward/record.url?scp=85043996937&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043996937&partnerID=8YFLogxK

U2 - 10.1126/sciadv.aap9977

DO - 10.1126/sciadv.aap9977

M3 - Article

C2 - 29556530

AN - SCOPUS:85043996937

VL - 4

JO - Science advances

JF - Science advances

SN - 2375-2548

IS - 3

M1 - eaap9977

ER -