Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

J. B. Wang; S. R. Johnson; S. A. Chaparro; D. Ding; Y. Cao; Yu G. Sadofyev; Y. H. Zhang; J. A. Gupta; C. Z. Guo

doi:10.1109/ISCSPC.2003.1354433

Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

J. B. Wang
, S. R. Johnson
, S. A. Chaparro
, D. Ding
, Y. Cao
, Yu G. Sadofyev
, Y. H. Zhang
, J. A. Gupta
, C. Z. Guo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Photoluminescence spectroscopy was observed for a set of Al_0.5Ga_0.5As/Al_xGa_1-xAs/GaAs_0.643Sb_0.357/Al_x Ga_1-xAs/Al_0.5Ga_0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights E_x= E_c(Al_xGa_1-xAs) - E_c(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs_0.643Sb_0.357/GaAs heterojunction is almost flat (weak type I), ΔE_c = E_c(GaAs) - E_c(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

Original language	English (US)
Title of host publication	2003 30th International Symposium on Compound Semiconductors, ISCS 2003
Subtitle of host publication	Post-Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	66-71
Number of pages	6
ISBN (Electronic)	0780386140
DOIs	https://doi.org/10.1109/ISCSPC.2003.1354433
State	Published - 2003
Externally published	Yes
Event	30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-August

Conference

Conference	30th International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

Bibliographical note

Publisher Copyright:
© 2004 IEEE.

Publisher link

10.1109/ISCSPC.2003.1354433

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Wang, J. B., Johnson, S. R., Chaparro, S. A., Ding, D., Cao, Y., Sadofyev, Y. G., Zhang, Y. H., Gupta, J. A., & Guo, C. Z. (2003). Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (pp. 66-71). Article 1354433 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354433

Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. / Wang, J. B.; Johnson, S. R.; Chaparro, S. A. et al.
2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 66-71 1354433 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, JB, Johnson, SR, Chaparro, SA, Ding, D, Cao, Y, Sadofyev, YG, Zhang, YH, Gupta, JA & Guo, CZ 2003, Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. in 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings., 1354433, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-August, Institute of Electrical and Electronics Engineers Inc., pp. 66-71, 30th International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCSPC.2003.1354433

Wang JB, Johnson SR, Chaparro SA, Ding D, Cao Y, Sadofyev YG et al. Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 66-71. 1354433. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCSPC.2003.1354433

Wang, J. B. ; Johnson, S. R. ; Chaparro, S. A. et al. / Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy. 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 66-71 (IEEE International Symposium on Compound Semiconductors, Proceedings).

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title = "Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy",

abstract = "Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.",

author = "Wang, \{J. B.\} and Johnson, \{S. R.\} and Chaparro, \{S. A.\} and D. Ding and Y. Cao and Sadofyev, \{Yu G.\} and Zhang, \{Y. H.\} and Gupta, \{J. A.\} and Guo, \{C. Z.\}",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 30th International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCSPC.2003.1354433",

language = "English (US)",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "66--71",

booktitle = "2003 30th International Symposium on Compound Semiconductors, ISCS 2003",

}

TY - GEN

T1 - Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

AU - Wang, J. B.

AU - Johnson, S. R.

AU - Chaparro, S. A.

AU - Ding, D.

AU - Cao, Y.

AU - Sadofyev, Yu G.

AU - Zhang, Y. H.

AU - Gupta, J. A.

AU - Guo, C. Z.

PY - 2003

Y1 - 2003

N2 - Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

AB - Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

UR - https://www.scopus.com/pages/publications/84979295361

UR - https://www.scopus.com/pages/publications/84979295361#tab=citedBy

U2 - 10.1109/ISCSPC.2003.1354433

DO - 10.1109/ISCSPC.2003.1354433

M3 - Conference contribution

AN - SCOPUS:84979295361

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 66

EP - 71

BT - 2003 30th International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

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