Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

A. Stesmans, V. V. Afanas'ev, F. Chen, S. A. Campbell

Research output: Contribution to journalArticle

Abstract

We report on a low-temperature electron spin resonance (ESR) study of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)- HfO2 deposited by distinct chemical vapor deposition (CVD) techniques using chemically different precursors. The incorporation of N is revealed in (100)Si/HfO2 structures with ultrathin a-HfO2 films deposited by CVD using Hf(NO3)4 as precursor: Upon 60Co γ-irradiation, a prominent ESR powder pattern is observed, which via ESR measurements at two observational frequencies has been incontrovertibly identified as originating from NO2 radicals (density ≥55 at ppm). The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network. Based on symmetry considerations, it is suggested that during deposition, N is incorporated in the HfO2 network as neutral N≡O3 precursors, which are transformed into ESR-active NO2 radicals upon γ-irradiation. The N incorporation appears inherent to the particular nitrado CVD process, an aspect that may bear on the electrical properties of the insulator, such as, e.g., introducing charge traps.

Original languageEnglish (US)
Pages (from-to)197-202
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number4-6 SPEC. ISS.
DOIs
StatePublished - Dec 10 2004

Fingerprint

Paramagnetic resonance
electron paramagnetic resonance
Nitrogen
nitrogen
Chemical vapor deposition
vapor deposition
Irradiation
irradiation
bears
Powders
Electric properties
electrical properties
insulators
traps
Molecules
symmetry
molecules
Temperature

Keywords

  • Defects
  • Electron spin resonance
  • Hf oxide
  • Si/insulator structure

Cite this

Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance. / Stesmans, A.; Afanas'ev, V. V.; Chen, F.; Campbell, S. A.

In: Materials Science in Semiconductor Processing, Vol. 7, No. 4-6 SPEC. ISS., 10.12.2004, p. 197-202.

Research output: Contribution to journalArticle

@article{5f37dfe9326b4e5494259c1a5fda572d,
title = "Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance",
abstract = "We report on a low-temperature electron spin resonance (ESR) study of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)- HfO2 deposited by distinct chemical vapor deposition (CVD) techniques using chemically different precursors. The incorporation of N is revealed in (100)Si/HfO2 structures with ultrathin a-HfO2 films deposited by CVD using Hf(NO3)4 as precursor: Upon 60Co γ-irradiation, a prominent ESR powder pattern is observed, which via ESR measurements at two observational frequencies has been incontrovertibly identified as originating from NO2 radicals (density ≥55 at ppm). The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network. Based on symmetry considerations, it is suggested that during deposition, N is incorporated in the HfO2 network as neutral N≡O3 precursors, which are transformed into ESR-active NO2 radicals upon γ-irradiation. The N incorporation appears inherent to the particular nitrado CVD process, an aspect that may bear on the electrical properties of the insulator, such as, e.g., introducing charge traps.",
keywords = "Defects, Electron spin resonance, Hf oxide, Si/insulator structure",
author = "A. Stesmans and Afanas'ev, {V. V.} and F. Chen and Campbell, {S. A.}",
year = "2004",
month = "12",
day = "10",
doi = "10.1016/j.mssp.2004.09.091",
language = "English (US)",
volume = "7",
pages = "197--202",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "4-6 SPEC. ISS.",

}

TY - JOUR

T1 - Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

AU - Stesmans, A.

AU - Afanas'ev, V. V.

AU - Chen, F.

AU - Campbell, S. A.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - We report on a low-temperature electron spin resonance (ESR) study of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)- HfO2 deposited by distinct chemical vapor deposition (CVD) techniques using chemically different precursors. The incorporation of N is revealed in (100)Si/HfO2 structures with ultrathin a-HfO2 films deposited by CVD using Hf(NO3)4 as precursor: Upon 60Co γ-irradiation, a prominent ESR powder pattern is observed, which via ESR measurements at two observational frequencies has been incontrovertibly identified as originating from NO2 radicals (density ≥55 at ppm). The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network. Based on symmetry considerations, it is suggested that during deposition, N is incorporated in the HfO2 network as neutral N≡O3 precursors, which are transformed into ESR-active NO2 radicals upon γ-irradiation. The N incorporation appears inherent to the particular nitrado CVD process, an aspect that may bear on the electrical properties of the insulator, such as, e.g., introducing charge traps.

AB - We report on a low-temperature electron spin resonance (ESR) study of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)- HfO2 deposited by distinct chemical vapor deposition (CVD) techniques using chemically different precursors. The incorporation of N is revealed in (100)Si/HfO2 structures with ultrathin a-HfO2 films deposited by CVD using Hf(NO3)4 as precursor: Upon 60Co γ-irradiation, a prominent ESR powder pattern is observed, which via ESR measurements at two observational frequencies has been incontrovertibly identified as originating from NO2 radicals (density ≥55 at ppm). The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network. Based on symmetry considerations, it is suggested that during deposition, N is incorporated in the HfO2 network as neutral N≡O3 precursors, which are transformed into ESR-active NO2 radicals upon γ-irradiation. The N incorporation appears inherent to the particular nitrado CVD process, an aspect that may bear on the electrical properties of the insulator, such as, e.g., introducing charge traps.

KW - Defects

KW - Electron spin resonance

KW - Hf oxide

KW - Si/insulator structure

UR - http://www.scopus.com/inward/record.url?scp=9544237165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9544237165&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2004.09.091

DO - 10.1016/j.mssp.2004.09.091

M3 - Article

AN - SCOPUS:9544237165

VL - 7

SP - 197

EP - 202

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 4-6 SPEC. ISS.

ER -