Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Pankaj Sharma; Rohit Singh; Vishnu Awasthi; Sushil K. Pandey; Vivek Garg; Shaibal Mukherjee

doi:10.1039/c5ra13921j

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Pankaj Sharma, Rohit Singh, Vishnu Awasthi, Sushil K. Pandey, Vivek Garg, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W^-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.

Original language	English (US)
Pages (from-to)	85523-85529
Number of pages	7
Journal	RSC Advances
Volume	5
Issue number	104
DOIs	https://doi.org/10.1039/c5ra13921j
State	Published - Jan 1 2015

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title = "Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector",

abstract = "Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.",

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T1 - Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

AU - Sharma, Pankaj

AU - Singh, Rohit

AU - Awasthi, Vishnu

AU - Pandey, Sushil K.

AU - Garg, Vivek

AU - Mukherjee, Shaibal

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.

AB - Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.

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Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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