Abstract
Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.
Original language | English (US) |
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Pages (from-to) | 85523-85529 |
Number of pages | 7 |
Journal | RSC Advances |
Volume | 5 |
Issue number | 104 |
DOIs | |
State | Published - 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 The Royal Society of Chemistry.