In this paper, we present a detailed analysis of VCOs using a capacitively degenerated negative resistance cell. The negative resistance cell using capacitive degeneration has a higher maximum attainable oscillation frequency and a smaller equivalent shunt capacitance when compared to the widely used cross-coupled negative-gm cell. These properties are of particular interest for the design of high-frequency and/or wide tuning range VCOs. The negative resistance provided by a traditional capacitively degenerated negative resistance cell is lower than that provided by a cross-coupled negative-gm cell. We present an active capacitive degeneration topology that overcomes this limitation. To validate this circuit topology we use two test vehicles. The first test vehicle is a 5.3 GHz VCO designed in a 0.25 µm CMOS technology and the second test vehicle is a 20 GHz VCO designed in a 0.25 µm BiCMOS technology. Measurement and simulation results from both test vehicles effectively demonstrate the efficacy of the capacitive degeneration technique.
Bibliographical notePublisher Copyright:
© 2006 by World Scientific Publishing Co. Pte. Ltd.
- Analog integrated circuits
- BiCMOS integrated circuits
- Capacitive degeneration
- High-frequency LC oscillators
- Negative resistance cell
- Voltage-controlled oscillators