Design of ring oscillator structures for measuring isolated NBTI and PBTI

Tony T. Kim, Pong Fei Lu, Chris H. Kim

Research output: Contribution to conferencePaperpeer-review

10 Scopus citations

Abstract

Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency or threshold voltage shifts. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including beat frequency sensing circuitry have been designed in a 0.9V, 45nm SOI technology.

Original languageEnglish (US)
Pages1580-1583
Number of pages4
DOIs
StatePublished - Sep 28 2012
Event2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of
Duration: May 20 2012May 23 2012

Other

Other2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
CountryKorea, Republic of
CitySeoul
Period5/20/125/23/12

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