Design of AlGaN/GaN heterojunction bipolar transistor structures

Keyphrases

• Transistor Structure 100%
• AlGaN-GaN 100%
• Heterojunction Bipolar Transistors 100%
• Carrier Density 50%
• Spontaneous Polarization 50%
• Strain Effect 50%
• Pseudomorphic 50%
• III-nitride Materials 50%
• Polarization Charge 50%
• Bipolar Transistor 50%
• Large Hole 50%
• Current Gain 50%
• Majority Carriers 50%
• Base Transit Time 50%
• Base Layer 50%
• Spreading Resistance 50%
• Carrier Distribution 50%
• Band Profile 50%
• Piezoelectric Polarization 50%
• P-n Heterojunction 50%
• Polystyrene Nanoplastics (PS-NPs) 50%

Engineering

• Bipolar Transistor 100%
• Heterojunctions 100%
• Piezoelectric 33%
• III Nitride Materials 33%
• Base Transit Time 33%
• Base Layer 33%
• Effect of Strain 33%
• Current Gain 33%
• Carrier Concentration 33%

Material Science

• Heterojunction 100%
• Bipolar Transistor 100%
• Piezoelectricity 33%
• Carrier Concentration 33%
• III Nitride Materials 33%
• Effect of Strain 33%