Design and growth optimization by dual ion beam sputtered zno-based high-efficiency multiple quantum well green light emitting diode

Keyphrases

• Room Temperature 100%
• Design Optimization 100%
• Ion Beam 100%
• Growth Optimization 100%
• Dual-ion 100%
• High Efficiency 100%
• Multiple Quantum Wells 100%
• Green Light-emitting Diodes 100%
• Substrate Temperature 66%
• ZnO Film 66%
• Morphological Characterization 33%
• Growth Parameters 33%
• Growth Conditions 33%
• Parameter Optimization 33%
• Structural Characterization 33%
• Electrical Characterization 33%
• Preferred Orientation 33%
• Photoluminescence 33%
• (001) Substrate 33%
• Simulation Software 33%
• X-ray Diffraction Measurement 33%
• Carrier Mobility 33%
• Low Resistivity 33%
• ZnO Thin Films 33%
• Carrier Concentration 33%
• Theoretical Design 33%
• Substrate Effect 33%
• Optical Characterization 33%
• Si(111) 33%
• Depositional System 33%
• Four-probe 33%
• Turn-on Voltage 33%
• Light-emitting Diodes 33%
• Internal Quantum Efficiency 33%
• Photoluminescence Studies 33%
• Band-edge Emission 33%
• Optimized Growth 33%
• Hall Measurement 33%
• Dual Ion Beam Sputtering 33%
• Shoulder Peak 33%

Engineering

• Quantum Well 100%
• Light-Emitting Diode 100%
• Room Temperature 100%
• Substrate Temperature 66%
• Band Edge 33%
• Ray Diffraction 33%
• Growth Condition 33%
• Carrier Concentration 33%
• Deposition System 33%
• Internal Quantum Efficiency 33%
• Emitting Device 33%
• Growth Parameter 33%
• Thin Films 33%
• Theoretical Study 33%
• Simulation Software 33%
• Carrier Mobility 33%
• Preferred Orientation 33%

Material Science

• Quantum Well 100%
• ZnO 100%
• Light-Emitting Diode 100%
• Film 50%
• Photoluminescence 33%
• X-Ray Diffraction 16%
• Carrier Concentration 16%
• Electrical Resistivity 16%
• Carrier Mobility 16%
• Diffraction Measurement 16%
• Thin Films 16%
• Morphology 16%