Design and Fabrication of 0.25-μm MESFET's with Parallel and π-Gate Structures

Rao M. Nagarajan; James M. Van Hove; Steven D. RasK; Gregory P. Thomes; Gregory T. Cibuzar; Jon D. Jorgenson; Edward Y. Chang; Krishna P. Pande

doi:10.1109/16.21195

Design and Fabrication of 0.25-μm MESFET's with Parallel and π-Gate Structures

Rao M. Nagarajan, James M. Van Hove, Steven D. RasK, Gregory P. Thomes, Gregory T. Cibuzar, Jon D. Jorgenson, Edward Y. Chang, Krishna P. Pande

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Abstract

The design and fabrication of 0.25-μm MESFET's with a channel length of 2.3 pm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described for the first time. MESFET's were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FET's show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an fmaxof 90–120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved.

Original language	English (US)
Pages (from-to)	142-145
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	36
Issue number	1
DOIs	https://doi.org/10.1109/16.21195
State	Published - Jan 1989
Externally published	Yes

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title = "Design and Fabrication of 0.25-μm MESFET's with Parallel and π-Gate Structures",

abstract = "The design and fabrication of 0.25-μm MESFET's with a channel length of 2.3 pm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described for the first time. MESFET's were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FET's show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an fmaxof 90–120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved.",

author = "Nagarajan, {Rao M.} and {Van Hove}, {James M.} and RasK, {Steven D.} and Thomes, {Gregory P.} and Cibuzar, {Gregory T.} and Jorgenson, {Jon D.} and Chang, {Edward Y.} and Pande, {Krishna P.}",

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AU - Nagarajan, Rao M.

AU - Van Hove, James M.

AU - RasK, Steven D.

AU - Thomes, Gregory P.

AU - Cibuzar, Gregory T.

AU - Jorgenson, Jon D.

AU - Chang, Edward Y.

AU - Pande, Krishna P.

PY - 1989/1

Y1 - 1989/1

N2 - The design and fabrication of 0.25-μm MESFET's with a channel length of 2.3 pm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described for the first time. MESFET's were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FET's show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an fmaxof 90–120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved.

AB - The design and fabrication of 0.25-μm MESFET's with a channel length of 2.3 pm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described for the first time. MESFET's were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FET's show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an fmaxof 90–120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved.

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Design and Fabrication of 0.25-μm MESFET's with Parallel and π-Gate Structures

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