Design and Fabrication of 0.25-μm MESFET's with Parallel and π-Gate Structures

Rao M. Nagarajan, James M. Van Hove, Steven D. RasK, Gregory P. Thomes, Gregory T. Cibuzar, Jon D. Jorgenson, Edward Y. Chang, Krishna P. Pande

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The design and fabrication of 0.25-μm MESFET's with a channel length of 2.3 pm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described for the first time. MESFET's were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FET's show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an fmaxof 90–120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved.

Original languageEnglish (US)
Pages (from-to)142-145
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 1989
Externally publishedYes


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