Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications

C. Kshirsagar, W. Xu, C. H. Kim, S. J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Transition metal dichalcogenides (TMDs) have been of tremendous interest recently for a wide range of electronic and photonic device applications. One of the most promising TMD for scaled transistors is molybdenum disulfide (MoS 2) [1], and several recent reports have shown promising performance and scalability for MoS2 MOSFETs [2-3]. However, one aspect of these devices that has not received significant attention is their potential for extremely-low leakage operation. Monolayer MoS2 is an ideal material for use in static and dynamic random access memories since its large effective mass and wide band gap are expected to suppress gate induced drain leakage (GIDL) arising from band-to-band tunneling (Fig. 1), while its monolayer nature should enable improved scalability compared to silicon. In order to realize its potential for low-leakage applications, careful modeling and design space analysis is needed. In this work, we describe the design space required to realize two-dimensional (2D) MoS2 low-leakage MOSFETs. We combine TCAD electrostatic simulations with an analytical transport model to predict the subthreshold performance of MoS2 MOSFETs. We further apply this model to a dynamic memory cell design and benchmark the performance advantages compared to conventional low-leakage silicon technology.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-188
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

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