Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

D. K. Avasthi, S. K. Hui, E. T. Subramaniyam, B. R. Mehta

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.

Original languageEnglish (US)
Pages (from-to)1061-1064
Number of pages4
JournalVacuum
Volume47
Issue number9
DOIs
StatePublished - Sep 1996

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