Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

D. K. Avasthi; S. K. Hui; E. T. Subramaniyam; B. R. Mehta

doi:10.1016/0042-207X(96)00154-6

Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

D. K. Avasthi, S. K. Hui, E. T. Subramaniyam, B. R. Mehta

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Abstract

A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10^-4 at% with an inaccuracy of 15%.

Original language	English (US)
Pages (from-to)	1061-1064
Number of pages	4
Journal	Vacuum
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/0042-207X(96)00154-6
State	Published - Sep 1996
Externally published	Yes

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title = "Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope",

abstract = "A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.",

author = "Avasthi, {D. K.} and Hui, {S. K.} and Subramaniyam, {E. T.} and Mehta, {B. R.}",

year = "1996",

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AU - Avasthi, D. K.

AU - Hui, S. K.

AU - Subramaniyam, E. T.

AU - Mehta, B. R.

PY - 1996/9

Y1 - 1996/9

N2 - A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.

AB - A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.

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JO - Vacuum

JF - Vacuum

IS - 9

ER -

Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

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