Deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si

Saurabh J. Ullal; Harmeet Singh; Vahid Vahedi; Eray S. Aydil

doi:10.1116/1.1450578

Deposition of silicon oxychloride films on chamber walls during Cl₂/O₂ plasma etching of Si

Saurabh J. Ullal
, Harmeet Singh
, Vahid Vahedi
, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The deposition of silicon oxychloride films on chamber walls during Cl₂/O₂ plasma etching of Si was discussed. The Cl content and deposition rate of the films were quantified using the position of the Si-O peak and Si-O and OSi-Cl infrared absorption intensities. It was proposed that the silicon oxychloride film was deposited through oxidation of SiCl_x molecules adsorbed on the reactor walls.

Original language	English (US)
Pages (from-to)	499-506
Number of pages	8
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1450578
State	Published - Mar 2002

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Copyright 2008 Elsevier B.V., All rights reserved.

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10.1116/1.1450578

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abstract = "The deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si was discussed. The Cl content and deposition rate of the films were quantified using the position of the Si-O peak and Si-O and OSi-Cl infrared absorption intensities. It was proposed that the silicon oxychloride film was deposited through oxidation of SiClx molecules adsorbed on the reactor walls.",

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