The deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si was discussed. The Cl content and deposition rate of the films were quantified using the position of the Si-O peak and Si-O and OSi-Cl infrared absorption intensities. It was proposed that the silicon oxychloride film was deposited through oxidation of SiClx molecules adsorbed on the reactor walls.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|State||Published - Mar 2002|
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