Depletion-mode n-channel organic field-effect transistors based on NTCDA

Mo Zhu; Guirong Liang; Tianhong Cui; Kody Varahramyan

doi:10.1016/S0038-1101(03)00141-2

Depletion-mode n-channel organic field-effect transistors based on NTCDA

Mo Zhu, Guirong Liang, Tianhong Cui, Kody Varahramyan

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm²V^-1s^-1. The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (V_ds = 60 V) is 2.25 × 10².

Original language	English (US)
Pages (from-to)	1855-1858
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(03)00141-2
State	Published - Oct 2003

Bibliographical note

Funding Information:
This work is partially supported by the DARPA, DAAD19-02-1-0338 and CEnIT seed grant at Louisiana Tech University.

Keywords

Depletion-mode
Energy level
NTCDA
Organic field-effect transistor (OFET)

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10.1016/S0038-1101(03)00141-2

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title = "Depletion-mode n-channel organic field-effect transistors based on NTCDA",

abstract = "The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm2V-1s-1. The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (Vds = 60 V) is 2.25 × 102.",

keywords = "Depletion-mode, Energy level, NTCDA, Organic field-effect transistor (OFET)",

author = "Mo Zhu and Guirong Liang and Tianhong Cui and Kody Varahramyan",

note = "Funding Information: This work is partially supported by the DARPA, DAAD19-02-1-0338 and CEnIT seed grant at Louisiana Tech University. ",

year = "2003",

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doi = "10.1016/S0038-1101(03)00141-2",

language = "English (US)",

volume = "47",

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TY - JOUR

T1 - Depletion-mode n-channel organic field-effect transistors based on NTCDA

AU - Zhu, Mo

AU - Liang, Guirong

AU - Cui, Tianhong

AU - Varahramyan, Kody

N1 - Funding Information: This work is partially supported by the DARPA, DAAD19-02-1-0338 and CEnIT seed grant at Louisiana Tech University.

PY - 2003/10

Y1 - 2003/10

N2 - The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm2V-1s-1. The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (Vds = 60 V) is 2.25 × 102.

AB - The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm2V-1s-1. The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (Vds = 60 V) is 2.25 × 102.

KW - Depletion-mode

KW - Energy level

KW - NTCDA

KW - Organic field-effect transistor (OFET)

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U2 - 10.1016/S0038-1101(03)00141-2

DO - 10.1016/S0038-1101(03)00141-2

M3 - Article

AN - SCOPUS:0042593151

SN - 0038-1101

VL - 47

SP - 1855

EP - 1858

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Depletion-mode n-channel organic field-effect transistors based on NTCDA

Abstract

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Keywords

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