Depletion-mode n-channel organic field-effect transistors based on NTCDA

Mo Zhu, Guirong Liang, Tianhong Cui, Kody Varahramyan

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10 Scopus citations

Abstract

The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm2V-1s-1. The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (Vds = 60 V) is 2.25 × 102.

Original languageEnglish (US)
Pages (from-to)1855-1858
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
StatePublished - Oct 2003

Bibliographical note

Funding Information:
This work is partially supported by the DARPA, DAAD19-02-1-0338 and CEnIT seed grant at Louisiana Tech University.

Keywords

  • Depletion-mode
  • Energy level
  • NTCDA
  • Organic field-effect transistor (OFET)

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