Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Jin Yue, Abhinav Prakash, Matthew C. Robbins, Steven J. Koester, Bharat Jalan

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.

Original languageEnglish (US)
Pages (from-to)21061-21065
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number25
DOIs
StatePublished - Jun 27 2018

Fingerprint

Field effect transistors
Metals
Gate dielectrics
Transconductance
MOSFET devices
Conduction bands
Molecular beam epitaxy
Perovskite
Temperature
Ferroelectric materials
Heterojunctions
Transistors
Demonstrations
Oxide semiconductors
strontium titanium oxide

Keywords

  • defects
  • FET
  • high mobility
  • MBE
  • stannates perovskite
  • trap density

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article

Cite this

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material. / Yue, Jin; Prakash, Abhinav; Robbins, Matthew C.; Koester, Steven J.; Jalan, Bharat.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 25, 27.06.2018, p. 21061-21065.

Research output: Contribution to journalArticle

Yue, Jin ; Prakash, Abhinav ; Robbins, Matthew C. ; Koester, Steven J. ; Jalan, Bharat. / Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 25. pp. 21061-21065.
@article{01a7619dcc1443a08e3b0eb63b5bcc6e,
title = "Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material",
abstract = "The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.",
keywords = "defects, FET, high mobility, MBE, stannates perovskite, trap density",
author = "Jin Yue and Abhinav Prakash and Robbins, {Matthew C.} and Koester, {Steven J.} and Bharat Jalan",
year = "2018",
month = "6",
day = "27",
doi = "10.1021/acsami.8b05229",
language = "English (US)",
volume = "10",
pages = "21061--21065",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "25",

}

TY - JOUR

T1 - Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

AU - Yue, Jin

AU - Prakash, Abhinav

AU - Robbins, Matthew C.

AU - Koester, Steven J.

AU - Jalan, Bharat

PY - 2018/6/27

Y1 - 2018/6/27

N2 - The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.

AB - The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.

KW - defects

KW - FET

KW - high mobility

KW - MBE

KW - stannates perovskite

KW - trap density

UR - http://www.scopus.com/inward/record.url?scp=85048679417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048679417&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b05229

DO - 10.1021/acsami.8b05229

M3 - Article

VL - 10

SP - 21061

EP - 21065

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 25

ER -