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The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.
Bibliographical noteFunding Information:
This work is primarily supported by the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205, the UMN MRSEC program under Award DMR-1420013, and partially by NSF through DMR-1741801. Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. A.P. acknowledges the support from the UMN Doctoral Dissertation Fellowship.
© 2018 American Chemical Society.
- high mobility
- stannates perovskite
- trap density
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- Journal Article
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