Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Jin Yue, Abhinav Prakash, Matthew C. Robbins, Steven J. Koester, Bharat Jalan

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.

Original languageEnglish (US)
Pages (from-to)21061-21065
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number25
DOIs
StatePublished - Jun 27 2018

Keywords

  • defects
  • FET
  • high mobility
  • MBE
  • stannates perovskite
  • trap density

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article

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