Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

Maituo Yu, Saeed Moayedpour, Shuyang Yang, Derek Dardzinski, Chunzhi Wu, Vlad S. Pribiag, Noa Marom

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Abstract

Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory with a machine-learned Hubbard U correction [Yu, npj Comput. Mater. 6, 180 (2020)2057-396010.1038/s41524-020-00446-9] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface states. For all interface configurations studied here, the induced magnetic moment in the InAs is small. Our results suggest that this interface, in its coherent form studied here, may not be promising for inducing equilibrium magnetic properties in InAs.

Original languageEnglish (US)
Article number064606
JournalPhysical Review Materials
Volume5
Issue number6
DOIs
StatePublished - Jun 2021

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© 2021 American Physical Society.

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