Dependence of composition and microstructure of RuOx films on target status and substrate temperature in reactive sputtering deposition

Q. Wang; K. A. Yang; A. Franciosi; D. F. Evans; W. L. Gladfelter

doi:10.1557/proc-433-151

Dependence of composition and microstructure of RuO_x films on target status and substrate temperature in reactive sputtering deposition

Q. Wang, K. A. Yang, A. Franciosi, D. F. Evans, W. L. Gladfelter

Chemistry (Twin Cities)

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Ruthenium oxide films were deposited on Al₂O₃ (0001) and (11̄02) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru:O ratio of 1:2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO₂ (100)∥Al₂O₃ (0001) and RuO₂ (101)∥Al₂O₃ (11̄02). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru:O ratio of 1:2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO_2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.

Original language	English (US)
Pages (from-to)	151-156
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	433
DOIs	https://doi.org/10.1557/proc-433-151
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

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@article{a168f3dcb64b4f2a901e59cf9bac2927,

title = "Dependence of composition and microstructure of RuOx films on target status and substrate temperature in reactive sputtering deposition",

abstract = "Ruthenium oxide films were deposited on Al2O3 (0001) and (1{\=1}02) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru:O ratio of 1:2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO2 (100)∥Al2O3 (0001) and RuO2 (101)∥Al2O3 (1{\=1}02). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru:O ratio of 1:2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.",

author = "Q. Wang and Yang, {K. A.} and A. Franciosi and Evans, {D. F.} and Gladfelter, {W. L.}",

year = "1996",

doi = "10.1557/proc-433-151",

language = "English (US)",

volume = "433",

pages = "151--156",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Dependence of composition and microstructure of RuOx films on target status and substrate temperature in reactive sputtering deposition

AU - Wang, Q.

AU - Yang, K. A.

AU - Franciosi, A.

AU - Evans, D. F.

AU - Gladfelter, W. L.

PY - 1996

Y1 - 1996

N2 - Ruthenium oxide films were deposited on Al2O3 (0001) and (11̄02) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru:O ratio of 1:2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO2 (100)∥Al2O3 (0001) and RuO2 (101)∥Al2O3 (11̄02). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru:O ratio of 1:2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.

AB - Ruthenium oxide films were deposited on Al2O3 (0001) and (11̄02) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru:O ratio of 1:2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO2 (100)∥Al2O3 (0001) and RuO2 (101)∥Al2O3 (11̄02). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru:O ratio of 1:2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030388259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030388259&partnerID=8YFLogxK

U2 - 10.1557/proc-433-151

DO - 10.1557/proc-433-151

M3 - Conference article

AN - SCOPUS:0030388259

SN - 0272-9172

VL - 433

SP - 151

EP - 156

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Dependence of composition and microstructure of RuO_x films on target status and substrate temperature in reactive sputtering deposition

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