Dependence of bias stress on hydrophobicity of gate insulator in solution-processed organic thin-film transistors

Wan Woo Noh, Sin Hyung Lee, Gyujeong Lee, In Ho Lee, Hea Lim Park, Min Hoi Kim, Sin Doo Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We demonstrated the effect of the hydrophobicity of a gate insulator on the bias stress in a solutionprocessed organic thin-film transistor (OTFT). Without changing the surface morphology, only the hydrophobicity of the gate insulator was systematically tailored to achieve the electrical stability of the OTFT against the bias stress. The shift of the threshold voltage (VTH) by the gate bias stress was found to decrease with increasing the hydrophobicity of the gate insulator. The shift of VTH in the optimized OTFT was as small as -1.09 V under the gate bias stress for 1000 s.

Original languageEnglish (US)
Pages (from-to)8618-8621
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number8
DOIs
StatePublished - Aug 2016

Bibliographical note

Publisher Copyright:
Copyright © 2016 American Scientific Publishers.

Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.

Keywords

  • CYTOP
  • Gate bias stress
  • Hydrophobicity
  • Solution-processed organic thin-film transistors
  • Tips-pentacene

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