DENSITY-OF- STATES TAILS IN HEAVILY DOPED SEMICONDUCTORS

BI SHKLOVSKII BI, AL EFROS AL

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Density of electron states in the forbidden band of heavily doped semiconductors is analyzed by the effective mass method in order to find the principal term of the logarithm of density of states in the energy region where density of states is low. It is assumed that the fluctuations in impurity concentrations have a form of homogeneous spheres with varying charge and radius.

Original languageEnglish (US)
Pages (from-to)249-257
Number of pages9
JournalSov Phys Semicond
Volume4
Issue number2
StatePublished - Jan 1 1970
Externally publishedYes

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