Abstract
Using self-consistent density functional tight-binding simulations it is shown that Aluminum (Al) content in amorphous silica (a-SiO2) changes its ideal microscopic structure in a manner compatible to densification. Similar to the structure of pressure-densified a-SiO2, the Al-modified a-SiO2 comprises a network of Silicon (Si)-centered tetrahedra as well as unquenchable pentahedra and, to a smaller extent, hexahedra coordination defects. Al itself acts not only as a network former, with fourfold coordination, but also as a center for fivefold and sixfold coordination defects. Al content promotes densification since it shifts the potential energy minima at densities larger than in their pristine counterpart. Calculations uncover that Young's modulus (Y) and static dielectric constants (ε0) can be effectively doubled through densification. Oxygen starvation promotes network polymerization, which further increases Y and ε0. However, the small rings formation through Si─Si bonding and presence of undercoordinated Si introduce electronic states in the electronic band gap. The results provide guidance for the bottom-up design of amorphous silica with tunable microscopic structure and properties desirable for advancing electronic applications.
Original language | English (US) |
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Article number | 2200284 |
Journal | Advanced Theory and Simulations |
Volume | 5 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2022 |
Bibliographical note
Funding Information:This work was supported by Lam Research Corporation and the University of Minnesota Informatics Institute. Z.T. acknowledges the support by Guangdong Basic and Applied Basic Research Foundation (2020A1515110838). T.F. and T.D. acknowledge support from DFG FR-2833/7. Computational resources from the Minnesota Supercomputing Institute and Tianhe2-JK of Beijing Computational Science Research Center are greatly acknowledged.
Funding Information:
This work was supported by Lam Research Corporation and the University of Minnesota Informatics Institute. Z.T. acknowledges the support by Guangdong Basic and Applied Basic Research Foundation (2020A1515110838). T.F. and T.D. acknowledge support from DFG FR‐2833/7. Computational resources from the Minnesota Supercomputing Institute and Tianhe2‐JK of Beijing Computational Science Research Center are greatly acknowledged.
Publisher Copyright:
© 2022 The Authors. Advanced Theory and Simulations published by Wiley-VCH GmbH.
Keywords
- atomic layer deposition
- densification
- density functional-based tight binding
- dielectric constant
- elastic constant
- plasma
- silica