Demonstration of High-Performance Ultra-Wide Bandgap SrSnO3 Top-Gated MOSFETs

Junghyun Koo; Weideng Sun; Donghwan Kim; Hongseung Lee; Chengyu Zhu; Kiyoung Lee; Hagyoul Bae; Bharat Jalan; Gang Qiu

doi:10.1109/led.2026.3687403

Demonstration of High-Performance Ultra-Wide Bandgap SrSnO₃ Top-Gated MOSFETs

Junghyun Koo
, Weideng Sun
, Donghwan Kim
, Hongseung Lee
, Chengyu Zhu
, Kiyoung Lee
, Hagyoul Bae
, Bharat Jalan
, Gang Qiu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO₃ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO₂ gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm²/V·s , an on-state current up to 194, mA/mm, an on/off current ratio above 1×10⁸ , and a contact resistance of 1.3 Ω·mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO₃ as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.

Original language	English (US)
Pages (from-to)	1133-1136
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	47
Issue number	6
DOIs	https://doi.org/10.1109/led.2026.3687403
State	Published - Jun 1 2026

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

MOSFET
SrSnO
perovskites
power device
stannate
ulta-wide bandgap semiconductors

Publisher link

10.1109/led.2026.3687403

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@article{d0c6fc8565be4045859abd881f4613c7,

title = "Demonstration of High-Performance Ultra-Wide Bandgap SrSnO3 Top-Gated MOSFETs",

abstract = "We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO3 (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO2 gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm2/V·s , an on-state current up to 194, mA/mm, an on/off current ratio above 1{\texttimes}108 , and a contact resistance of 1.3 Ω·mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO3 as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.",

keywords = "MOSFET, SrSnO, perovskites, power device, stannate, ulta-wide bandgap semiconductors",

author = "Junghyun Koo and Weideng Sun and Donghwan Kim and Hongseung Lee and Chengyu Zhu and Kiyoung Lee and Hagyoul Bae and Bharat Jalan and Gang Qiu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2026",

month = jun,

day = "1",

doi = "10.1109/led.2026.3687403",

language = "English (US)",

volume = "47",

pages = "1133--1136",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Demonstration of High-Performance Ultra-Wide Bandgap SrSnO3 Top-Gated MOSFETs

AU - Koo, Junghyun

AU - Sun, Weideng

AU - Kim, Donghwan

AU - Lee, Hongseung

AU - Zhu, Chengyu

AU - Lee, Kiyoung

AU - Bae, Hagyoul

AU - Jalan, Bharat

AU - Qiu, Gang

PY - 2026/6/1

Y1 - 2026/6/1

N2 - We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO3 (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO2 gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm2/V·s , an on-state current up to 194, mA/mm, an on/off current ratio above 1×108 , and a contact resistance of 1.3 Ω·mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO3 as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.

AB - We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO3 (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO2 gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm2/V·s , an on-state current up to 194, mA/mm, an on/off current ratio above 1×108 , and a contact resistance of 1.3 Ω·mm. The devices also show a near-ideal subthreshold slope of 68 mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO3 as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications.

KW - MOSFET

KW - SrSnO

KW - perovskites

KW - power device

KW - stannate

KW - ulta-wide bandgap semiconductors

UR - https://www.scopus.com/pages/publications/105037757910

UR - https://www.scopus.com/pages/publications/105037757910#tab=citedBy

U2 - 10.1109/led.2026.3687403

DO - 10.1109/led.2026.3687403

M3 - Article

AN - SCOPUS:105037757910

SN - 0741-3106

VL - 47

SP - 1133

EP - 1136

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -