Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

Keyphrases

• N-channel 100%
• Depletion Mode 100%
• MESFET 100%
• SrSnO3 100%
• Drain Spacing 20%
• Undoped 20%
• Layered Structure 20%
• Schottky Barrier Height 20%
• Gate Electrode 20%
• Drive Current 20%
• Gate Length 20%
• Capacitance-voltage Measurements 20%
• Transconductance 20%
• Ohmic Contact 20%
• Hybrid Molecular Beam Epitaxy 20%
• Device Layer 20%
• Schottky Gate 20%
• GdScO3 20%

Engineering

• Field-Effect Transistor 100%
• Schottky Barrier 33%
• Barrier Height 33%
• Gate Length 33%
• Gate Electrode 33%
• Current Drive 33%
• Drain Spacing 33%
• Layer Structure 33%
• Ohmic Contacts 33%
• Electrical Measurement 33%

Material Science

• Field Effect Transistors 100%
• Film 66%
• Molecular Beam Epitaxy 33%
• Capacitance 33%
• Schottky Barrier 33%