Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

V. R.S.K. Chaganti; Abhinav Prakash; Jin Yue; Bharat Jalan; Steven J. Koester

doi:10.1109/LED.2018.2861320

Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

V. R.S.K. Chaganti, Abhinav Prakash, Jin Yue, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The demonstration of SrSnO₃ metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO₃ film on top of an 11-nm-thick undoped SrSnO₃ film grown by hybrid molecular beam epitaxy on a (110) GdScO₃ substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO₃ using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at V_GS = +1 V and V_DS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

Original language	English (US)
Article number	8423108
Pages (from-to)	1381-1384
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2861320
State	Published - Sep 2018

Bibliographical note

Funding Information:
Manuscript received July 10, 2018; revised July 22, 2018; accepted July 24, 2018. Date of publication July 31, 2018; date of current version August 23, 2018. This work was supported in part by the National Science Foundation (NSF) through the University of Minnesota under Grant MRSEC DMR-1420013 and and Grant DMR-1741801, in part by the Young Investigator Program of the Air Force Office of Scientific Research under Grant FA9550-16-1-0205. Portions of this work were performed in the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF. The work of A. Prakash was supported by the UMN Doctoral Dissertation Fellowship. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding author: Steven J. Koester.) V. R. S. K. Chaganti and S. J. Koester are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: skoester@umn.edu).

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Doping
Logic gates
MESFET
MESFETs
Molecular beam epitaxial growth
Performance evaluation
Perovskites
Stannate
Substrates

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Partial

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10.1109/LED.2018.2861320

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Cite this

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title = "Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET",

abstract = "The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).",

keywords = "Doping, Logic gates, MESFET, MESFETs, Molecular beam epitaxial growth, Performance evaluation, Perovskites, Stannate, Substrates",

author = "Chaganti, {V. R.S.K.} and Abhinav Prakash and Jin Yue and Bharat Jalan and Koester, {Steven J.}",

note = "Funding Information: Manuscript received July 10, 2018; revised July 22, 2018; accepted July 24, 2018. Date of publication July 31, 2018; date of current version August 23, 2018. This work was supported in part by the National Science Foundation (NSF) through the University of Minnesota under Grant MRSEC DMR-1420013 and and Grant DMR-1741801, in part by the Young Investigator Program of the Air Force Office of Scientific Research under Grant FA9550-16-1-0205. Portions of this work were performed in the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF. The work of A. Prakash was supported by the UMN Doctoral Dissertation Fellowship. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding author: Steven J. Koester.) V. R. S. K. Chaganti and S. J. Koester are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: skoester@umn.edu). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AU - Koester, Steven J.

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N2 - The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

AB - The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

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JF - IEEE Electron Device Letters

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ER -

Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET