Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

V. R.S.K. Chaganti, Abhinav Prakash, Jin Yue, Bharat Jalan, Steven J. Koester

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

Original languageEnglish (US)
Article number8423108
Pages (from-to)1381-1384
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number9
DOIs
StatePublished - Sep 1 2018

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MESFET devices
Demonstrations
Capacitance measurement
Ohmic contacts
Voltage measurement
Transconductance
Molecular beam epitaxy
Electrodes
Substrates

Keywords

  • Doping
  • Logic gates
  • MESFET
  • MESFETs
  • Molecular beam epitaxial growth
  • Performance evaluation
  • Perovskites
  • Stannate
  • Substrates

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 5

Cite this

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET. / Chaganti, V. R.S.K.; Prakash, Abhinav; Yue, Jin; Jalan, Bharat; Koester, Steven J.

In: IEEE Electron Device Letters, Vol. 39, No. 9, 8423108, 01.09.2018, p. 1381-1384.

Research output: Contribution to journalArticle

Chaganti, V. R.S.K. ; Prakash, Abhinav ; Yue, Jin ; Jalan, Bharat ; Koester, Steven J. / Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET. In: IEEE Electron Device Letters. 2018 ; Vol. 39, No. 9. pp. 1381-1384.
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