Projects per year
Abstract
The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).
Original language | English (US) |
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Article number | 8423108 |
Pages (from-to) | 1381-1384 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2018 |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
Keywords
- Doping
- Logic gates
- MESFET
- MESFETs
- Molecular beam epitaxial growth
- Performance evaluation
- Perovskites
- Stannate
- Substrates
MRSEC Support
- Partial
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- 2 Finished
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University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project