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The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).
Bibliographical noteFunding Information:
Manuscript received July 10, 2018; revised July 22, 2018; accepted July 24, 2018. Date of publication July 31, 2018; date of current version August 23, 2018. This work was supported in part by the National Science Foundation (NSF) through the University of Minnesota under Grant MRSEC DMR-1420013 and and Grant DMR-1741801, in part by the Young Investigator Program of the Air Force Office of Scientific Research under Grant FA9550-16-1-0205. Portions of this work were performed in the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF. The work of A. Prakash was supported by the UMN Doctoral Dissertation Fellowship. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding author: Steven J. Koester.) V. R. S. K. Chaganti and S. J. Koester are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: email@example.com).
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- Logic gates
- Molecular beam epitaxial growth
- Performance evaluation
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