Abstract
The authors report on the device and circuit performance of delta-doped complementary heterostructure insulated gate field effect transistors (C-HIGFETs) which make use of a high InAs mole fraction (y-value) pseudomorphic InyGa/sub 1-y/As channel along with a sub-channel delta-doped Si layer to adjust the n-HIGFET and p-HIGFET threshold voltages. Results are presented showing that increasing the y value of the InyGa/sub 1-y/As channel up to y=0.25 enhances both the n-HIGFET and the p-HIGFET device performance, as evidenced by the high transconductance values (i.e., G/sub m-n/>300 mS/mm and G/sub m-p/>70 mS/mm, respectively) for 1-mu m gate length devices. The authors present results from InyGa/sub 1-y/As channel (y=0.25) C-HIGFET ring oscillators with less than 4-mu W/gate standby-power consumption. These C-HIGFET ring oscillators exhibit gate delays as low as 143 ps at a standby-power of 40 mu W/gate and a switching-power-delay product of 250 fJ. The authors also report on the first fully functional delta-doped C-HIGFET 1 K 4 SRAM operating at a 284-MHz clock frequency and consuming only 183 mW.
Original language | English (US) |
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Title of host publication | International Electron Devices Meeting 1991, IEDM 1991 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 235-238 |
Number of pages | 4 |
ISBN (Electronic) | 0780302435 |
DOIs | |
State | Published - 1991 |
Event | International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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Volume | 1991-January |
ISSN (Print) | 0163-1918 |
Other
Other | International Electron Devices Meeting, IEDM 1991 |
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Country/Territory | United States |
City | Washington |
Period | 12/8/91 → 12/11/91 |
Bibliographical note
Publisher Copyright:© 1991 IEEE.
Keywords
- Circuit optimization
- Delay
- FETs
- HEMTs
- Insulation
- MODFETs
- Random access memory
- Ring oscillators
- Threshold voltage
- Transconductance