Delta-doped complementary heterostructure FETs with high Y-value pseudomorphic In1Ga/sub 1-y/As channels for ultra-low-power digital IC applications

D. E. Grider, P. P. Ruden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, T. E. Nohava, S. S. Swirhun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

The authors report on the device and circuit performance of delta-doped complementary heterostructure insulated gate field effect transistors (C-HIGFETs) which make use of a high InAs mole fraction (y-value) pseudomorphic InyGa/sub 1-y/As channel along with a sub-channel delta-doped Si layer to adjust the n-HIGFET and p-HIGFET threshold voltages. Results are presented showing that increasing the y value of the InyGa/sub 1-y/As channel up to y=0.25 enhances both the n-HIGFET and the p-HIGFET device performance, as evidenced by the high transconductance values (i.e., G/sub m-n/>300 mS/mm and G/sub m-p/>70 mS/mm, respectively) for 1-mu m gate length devices. The authors present results from InyGa/sub 1-y/As channel (y=0.25) C-HIGFET ring oscillators with less than 4-mu W/gate standby-power consumption. These C-HIGFET ring oscillators exhibit gate delays as low as 143 ps at a standby-power of 40 mu W/gate and a switching-power-delay product of 250 fJ. The authors also report on the first fully functional delta-doped C-HIGFET 1 K 4 SRAM operating at a 284-MHz clock frequency and consuming only 183 mW.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages235-238
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States
CityWashington
Period12/8/9112/11/91

Bibliographical note

Publisher Copyright:
© 1991 IEEE.

Keywords

  • Circuit optimization
  • Delay
  • FETs
  • HEMTs
  • Insulation
  • MODFETs
  • Random access memory
  • Ring oscillators
  • Threshold voltage
  • Transconductance

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