Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

C. D. Liang; R. Ma; Y. Su; A. O'Hara; E. X. Zhang; M. L. Alles; P. Wang; S. E. Zhao; S. T. Pantelides; Steven J Koester; R. D. Schrimpf; D. M. Fleetwood

doi:10.1109/TNS.2018.2828080

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics

C. D. Liang, R. Ma, Y. Su, A. O'Hara, E. X. Zhang, M. L. Alles, P. Wang, S. E. Zhao, S. T. Pantelides, Steven J Koester, R. D. Schrimpf, D. M. Fleetwood

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO₂ gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO₂ and H+ transport and reactions near the BP/HfO₂ interface in the observed radiation response and low-frequency noise.

Original language	English (US)
Pages (from-to)	1227-1238
Number of pages	12
Journal	IEEE Transactions on Nuclear Science
Volume	65
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2018.2828080
State	Published - Jun 2018

Bibliographical note

Funding Information:
Manuscript received January 16, 2018; revised April 12, 2018; accepted April 13, 2018. Date of publication April 19, 2018; date of current version June 13, 2018. This work was supported in part by the Defense Threat Reduction Agency Basic Research under Award HDTRA1-14-1-0042 and in part by the National Science Foundation under Grant DMR-1508433.

Publisher Copyright:
© 2018 IEEE.

Keywords

Black phosphorus (BP)
low-frequency noise
moisture effects
switched-bias annealing
total ionizing dose (TID)

Publisher link

10.1109/TNS.2018.2828080

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@article{8ae14a81c7914475a735a2f9f0c848c7,

title = "Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics",

abstract = "We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise.",

keywords = "Black phosphorus (BP), low-frequency noise, moisture effects, switched-bias annealing, total ionizing dose (TID)",

author = "Liang, {C. D.} and R. Ma and Y. Su and A. O'Hara and Zhang, {E. X.} and Alles, {M. L.} and P. Wang and Zhao, {S. E.} and Pantelides, {S. T.} and Koester, {Steven J} and Schrimpf, {R. D.} and Fleetwood, {D. M.}",

note = "Funding Information: Manuscript received January 16, 2018; revised April 12, 2018; accepted April 13, 2018. Date of publication April 19, 2018; date of current version June 13, 2018. This work was supported in part by the Defense Threat Reduction Agency Basic Research under Award HDTRA1-14-1-0042 and in part by the National Science Foundation under Grant DMR-1508433. Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

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T1 - Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

AU - Liang, C. D.

AU - Ma, R.

AU - Su, Y.

AU - O'Hara, A.

AU - Zhang, E. X.

AU - Alles, M. L.

AU - Wang, P.

AU - Zhao, S. E.

AU - Pantelides, S. T.

AU - Koester, Steven J

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

N1 - Funding Information: Manuscript received January 16, 2018; revised April 12, 2018; accepted April 13, 2018. Date of publication April 19, 2018; date of current version June 13, 2018. This work was supported in part by the Defense Threat Reduction Agency Basic Research under Award HDTRA1-14-1-0042 and in part by the National Science Foundation under Grant DMR-1508433. Publisher Copyright: © 2018 IEEE.

PY - 2018/6

Y1 - 2018/6

N2 - We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise.

AB - We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise.

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KW - moisture effects

KW - switched-bias annealing

KW - total ionizing dose (TID)

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