Abstract
We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from low-frequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of ∼0.2 and ∼0.5 eV. Larger defect-related peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise.
Original language | English (US) |
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Pages (from-to) | 1227-1238 |
Number of pages | 12 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 65 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2018 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- Black phosphorus (BP)
- low-frequency noise
- moisture effects
- switched-bias annealing
- total ionizing dose (TID)