Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers

Keyphrases

• 193nm Lithography 50%
• 300 Mm Wafer 50%
• Block Copolymer 50%
• Chemical Composition 50%
• Chemoepitaxy 50%
• Defect Density 50%
• Defect Mitigation 100%
• Defect Mode 100%
• Directed Self-assembly 100%
• Dry Etching 50%
• Etch Selectivity 50%
• Etching Conditions 50%
• Flory-Huggins Interaction Parameter 50%
• Guiding Structures 50%
• High chi 100%
• High Volume Manufacturing 50%
• High-resolution Patterning 50%
• Line Space 50%
• Low Defect Density 50%
• Organosilicon 50%
• Pattern Generation 50%
• Reactive Ion Etching 50%
• Silicon-containing Block Copolymer 100%
• Space Pattern 50%
• Sub-20 Nm 100%

Material Science

• Block Copolymer 100%
• Defect Density 50%
• Epitaxy 25%
• Lithography 25%
• Reactive Ion Etching 25%
• Self Assembly 50%
• Silicon 100%