Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers

Jan Doise, Geert Mannaert, Hyo Seon Suh, Paulina Rincon, Jai Hyun Koh, Ji Yeon Kim, Qingjun Zhu, Geert Vandenberghe, C. Grant Willson, Christopher J Ellison

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-containing block copolymers are considered promising materials for high resolution pattern generation through directed self-assembly. The nonpolar organo-silicon moieties result in a high Flory-Huggins interaction parameter (χ) when paired with a polar block, allowing features well below 20 nm full pitch to be generated. In addition, the incorporation of silicon provides excellent dry etch selectivity under a variety of reactive ion etching conditions. However, similar to all block copolymer systems under development, achieving sufficiently low defect density remains a critical hurdle for implementation of directed self-assembly into high volume manufacturing. This work reports our progress towards this end, using a chemo-epitaxy flow to direct the assembly of poly(4-trimethylsilylstyrene-block-4-methoxystyrene), resulting in sub-20 nm full pitch line/space patterns. This process employs 193 nm immersion lithography to define the guide structure and is run on 300 mm wafers in a fab-like environment. Our efforts in understanding the possible root cause(s) of the dominant defect modes and reducing the total defect density of the flow will be described. This study includes research on the influence of various process parameters as well as the chemical compositions of the different materials involved, and their interactions with specific defect modes.

Original languageEnglish (US)
Title of host publicationAdvances in Patterning Materials and Processes XXXVI
EditorsDaniel P. Sanders, Roel Gronheid
PublisherSPIE
ISBN (Electronic)9781510625679
DOIs
StatePublished - Jan 1 2019
EventAdvances in Patterning Materials and Processes XXXVI 2019 - San Jose, United States
Duration: Feb 25 2019Feb 28 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10960
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvances in Patterning Materials and Processes XXXVI 2019
CountryUnited States
CitySan Jose
Period2/25/192/28/19

Fingerprint

Block Copolymers
Silicon
Patterning
block copolymers
Block copolymers
Defects
Defect density
Self assembly
Self-assembly
defects
silicon
self assembly
Reactive ion etching
Epitaxial growth
Immersion Lithography
Lithography
Epitaxy
Process Parameters
Etching
Selectivity

Keywords

  • Directed self-assembly
  • block copolymer
  • defect mitigation
  • high-chi
  • silicon containing

Cite this

Doise, J., Mannaert, G., Suh, H. S., Rincon, P., Koh, J. H., Kim, J. Y., ... Ellison, C. J. (2019). Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers. In D. P. Sanders, & R. Gronheid (Eds.), Advances in Patterning Materials and Processes XXXVI [109600Y] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10960). SPIE. https://doi.org/10.1117/12.2515176

Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers. / Doise, Jan; Mannaert, Geert; Suh, Hyo Seon; Rincon, Paulina; Koh, Jai Hyun; Kim, Ji Yeon; Zhu, Qingjun; Vandenberghe, Geert; Willson, C. Grant; Ellison, Christopher J.

Advances in Patterning Materials and Processes XXXVI. ed. / Daniel P. Sanders; Roel Gronheid. SPIE, 2019. 109600Y (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10960).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Doise, J, Mannaert, G, Suh, HS, Rincon, P, Koh, JH, Kim, JY, Zhu, Q, Vandenberghe, G, Willson, CG & Ellison, CJ 2019, Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers. in DP Sanders & R Gronheid (eds), Advances in Patterning Materials and Processes XXXVI., 109600Y, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10960, SPIE, Advances in Patterning Materials and Processes XXXVI 2019, San Jose, United States, 2/25/19. https://doi.org/10.1117/12.2515176
Doise J, Mannaert G, Suh HS, Rincon P, Koh JH, Kim JY et al. Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers. In Sanders DP, Gronheid R, editors, Advances in Patterning Materials and Processes XXXVI. SPIE. 2019. 109600Y. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2515176
Doise, Jan ; Mannaert, Geert ; Suh, Hyo Seon ; Rincon, Paulina ; Koh, Jai Hyun ; Kim, Ji Yeon ; Zhu, Qingjun ; Vandenberghe, Geert ; Willson, C. Grant ; Ellison, Christopher J. / Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers. Advances in Patterning Materials and Processes XXXVI. editor / Daniel P. Sanders ; Roel Gronheid. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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