Defect formation and electronic transport at AlGaN/GaN interfaces

L. Hsu; W. Walukiewicz; E. E. Haller

doi:10.4028/www.scientific.net/msf.258-263.1749

Defect formation and electronic transport at AlGaN/GaN interfaces

L. Hsu, W. Walukiewicz, E. E. Haller

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Abstract

We have calculated the effects of charged defects located near a Al_xGa_1-xN/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths.

Original language	English (US)
Pages (from-to)	1749-1754
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	9993
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.1749
State	Published - 1997

Keywords

GaN
Heterostructure
Modulation doping
Two-dimensional electron gas

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abstract = "We have calculated the effects of charged defects located near a AlxGa1-xN/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths.",

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AU - Hsu, L.

AU - Walukiewicz, W.

AU - Haller, E. E.

PY - 1997

Y1 - 1997

N2 - We have calculated the effects of charged defects located near a AlxGa1-xN/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths.

AB - We have calculated the effects of charged defects located near a AlxGa1-xN/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths.

KW - GaN

KW - Heterostructure

KW - Modulation doping

KW - Two-dimensional electron gas

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SP - 1749

EP - 1754

JO - Materials Science Forum

JF - Materials Science Forum

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ER -

Defect formation and electronic transport at AlGaN/GaN interfaces

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